IRF6633PBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6633PBF
Manufacturer	International Rectifier
File Size	298.36 KB
Description	Power MOSFET
Datasheet	IRF6633PBF Datasheet
Additional preview pages of the IRF6633PBF datasheet.

Product details

Description

The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

Features

ltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 200 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 5.7A 8.7A BOTTOM 13A TOP EAS, Single Pulse Avalanche Energy (mJ) 160 120 80 40 0 25 50 75 100 125.

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Published: Apr 1, 2014 |