PULSE WIDTH Tj = 150°C 0.1 1 10 100 10 100 Fig 4. Typical Output Characteristics 1000 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 5. Typi.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is.

IRF6641TR1PBF

IRF6641TRPBF

IRF6643TRPbF

IRF6644

IRF6644PbF

IRF6645

IRF6645PBF

IRF6645TRPBF

IRF6646PbF

IRF6646TRPbF

IRF6648

IRF6648PbF

IRF6648TRPbF