Description
The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Features
- rain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
12
ID, Drain Current (A)
10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (°C)
5.0
ID ID ID ID
= 150µA = 250µA = 1.0mA = 1.0A
4.0
3.0
2.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
900 800 700 600 500 400 300 200 100 0 25 50 75
3.