Datasheet Details
| Part number | IRF6674TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 272.90 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6674TRPBF Datasheet
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General Description
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.
Key Features
- rce Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 14 12 5.0 Fig11. Maximum Safe Operating Area VGS(th) Gate threshold Voltage (V) 4.5 ID , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 4.0 3.5 ID = 250μA ID = 100μA 3.0 2.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 400 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 4.5A 9.3A BOTTOM 26.8A TO.