Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- , Reverse Drain Current (A)
100
100µsec
10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10
1msec
1 0.0 0.2 0.4 0.6 0.8
VGS = 0V 1.0 1.2
10msec
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
200
Fig10. Maximum Safe Operating Area
2.5
ID, Drain Current (A)
150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C)
VGS(th) Gate threshold Voltage (V)
175
2.0
ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75.
IRF6691TRPBF Datasheet
