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IRF6691 - HEXFET Power MOSFET

Description

The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode.

Features

  • iode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ - -.
  • +  RG.
  • dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type a.

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Full PDF Text Transcription

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PD - 95867A HEXFET® Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l IRF6691 Qg(typ.) 47nC VDSS 20V RDS(on) max 2.5mΩ@VGS = 4.5V 1.8mΩ@VGS = 10V MT DirectFET ™ ISOMETRIC Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode.
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