Datasheet Details
| Part number | IRF6691 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 228.86 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF6691_InternationalRectifier.pdf |
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Overview: PD - 95867A HEXFET® Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling patible l patible with existing Surface Mount Techniques l l IRF6691 Qg(typ.) 47nC VDSS 20V RDS(on) max 2.5mΩ@VGS = 4.5V 1.8mΩ@VGS = 10V MT DirectFET ISOMETRIC Applicable DirectFET Package/Layout Pad (see p.
| Part number | IRF6691 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 228.86 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF6691_InternationalRectifier.pdf |
|
|
|
The IRF6691 bines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
| Part Number | Description |
|---|---|
| IRF6691PBF | Power MOSFET |
| IRF6691TRPBF | Power MOSFET |
| IRF6601 | DirectFET Power MOSFET |
| IRF6603 | HEXFETPower MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
| IRF6607TR1 | Power MOSFET |
| IRF6608 | lHEXFET Power MOSFET |
| IRF6609 | Power MOSFET |
| IRF6609PBF | Power MOSFET |