IRF6691 Datasheet | International Rectifier

Description The IRF6691 bines IR’s industry leading Direct FET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6691 is characterized with reduced on resistance (R DS(on)), reverse recovery charge (Q rr) and source to drain voltage (VSD ) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous MOSFET sockets operating in 12 volt buss converters. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ±12 180 32 26 260 2.8 1.8 89 0.022 -40 to + 150 Units A g Power Dissipation g Power Dissipation Power Dissipation c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJA RθJA RθJA RθJC RθJ-PCB fj gj Junction-to-Ambient hj Junction-to-Case ij Junction-to-Ambient Junction-to-Ambient Parameter Typ. - - - 12.5 20 - - - 1.0 Max. - - - - - - 1.4 - - - Units °C/W Junction-to-PCB Mounted Notes  through ˆ are on page 10 .irf. 11/3/04 Static @ TJ = 25°C (unless otherwise...