IRF6691 - HEXFET Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6691
Manufacturer	International Rectifier
File Size	228.86 KB
Description	HEXFET Power MOSFET
Datasheet	IRF6691 Datasheet
Additional preview pages of the IRF6691 datasheet.

Product details

Description

The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode.

Features

iode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt - -.
+ RG.
dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type a.

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Published: Apr 16, 2005 |