Datasheet Details
| Part number | IRF6691TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 660.69 KB |
| Description | Power MOSFET |
| Datasheet | IRF6691TRPBF IRF6691PBF Datasheet (PDF) |
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Overview: PD - 97204 PROVISIONAL l l l l l l l l l RoHs pliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling patible patible with existing Surface Mount Techniques Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qrr 26nC IRF6691PbF IRF6691TRPbF RDS(on) Vgs(th) 2.0V VDSS tot VGS 20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V Qg Qgd 15nC Qgs2 4.4nC Qoss 30nC 47nC Applicable DirectFET Outline and Substrate Outline (see p.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRF6691TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 660.69 KB |
| Description | Power MOSFET |
| Datasheet | IRF6691TRPBF IRF6691PBF Datasheet (PDF) |
|
|
|
The IRF6691PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
| Part Number | Description |
|---|---|
| IRF6691 | HEXFET Power MOSFET |
| IRF6691PBF | Power MOSFET |
| IRF6601 | DirectFET Power MOSFET |
| IRF6603 | HEXFETPower MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
| IRF6607TR1 | Power MOSFET |
| IRF6608 | lHEXFET Power MOSFET |
| IRF6609 | Power MOSFET |
| IRF6609PBF | Power MOSFET |