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IRF6691TRPBF - Power MOSFET

Download the IRF6691TRPBF datasheet PDF (IRF6691PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • , Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Operating Area 2.5 ID, Drain Current (A) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) VGS(th) Gate threshold Voltage (V) 175 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75.

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Note: The manufacturer provides a single datasheet file (IRF6691PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97204 PROVISIONAL l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qrr 26nC IRF6691PbF IRF6691TRPbF RDS(on) Vgs(th) 2.0V VDSS tot VGS 20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V Qg Qgd 15nC Qgs2 4.4nC Qoss 30nC 47nC Applicable DirectFET Outline and Substrate Outline (see p.
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