Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- ward Voltage
90 80 70
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
2.5
60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A
1.5
1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
300
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 0.91A 1.16A.
IRF6711SPBF-InternationalRectifier.pdf
