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IRF6717MTRPBF Datasheet N-Channel HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 97345C IRF6717MPbF IRF6717MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halgen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.95m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 46nC 14nC 6.6nC 31nC 35nC 1.8V l Optimized for Sync.

FET socket of Sync.

Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.

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