Datasheet Details
| Part number | IRF6718L2TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 245.26 KB |
| Description | DirectFET Power MOSFET |
| Download | IRF6718L2TRPBF Download (PDF) |
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Overview: PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques IRF6718L2TR1PbF DirectFET® Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 20nC 9.4nC 67nC 50nC 1.
| Part number | IRF6718L2TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 245.26 KB |
| Description | DirectFET Power MOSFET |
| Download | IRF6718L2TRPBF Download (PDF) |
|
|
|
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
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