Description
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- to-Drain Voltage (V)
1msec
0.1 10.0 100.0 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
150
2.5
Fig11. Maximum Safe Operating Area
ID, Drain Current (A)
2.0
100
ID = 100µA
1.5
50
1.0
0 25 50 75 100 125 150 TC , Case Temperature (°C)
0.5 -75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
50
Fig 1.
IRF6724MTRPBF Datasheet
