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IRF6724MTRPBF - Power MOSFET

This page provides the datasheet information for the IRF6724MTRPBF, a member of the IRF6724MPBF Power MOSFET family.

Description

The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • to-Drain Voltage (V) 1msec 0.1 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 150 2.5 Fig11. Maximum Safe Operating Area ID, Drain Current (A) 2.0 100 ID = 100µA 1.5 50 1.0 0 25 50 75 100 125 150 TC , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature EAS, Single Pulse Avalanche Energy (mJ) 50 Fig 1.

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Full PDF Text Transcription

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PD -97131A IRF6724MPbF IRF6724MTRPbF RoHs Compliant and Halogen Free  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  33nC 10nC 3.9nC 34nC 20nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ MX Applicable DirectFET Outline and Substrate Outline (see p.
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