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IRF6802SDTRPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs pliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V l Dual Sided Cooling patible  l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses G G D D l patible with existing Surface Mount Techniques  S S l 100% Rg tested l PD - 97769 DirectFET®plus Power MOSFET ‚ SA Applicable DirectFET Outline and Substrate Outline (see p.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6802SDTRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • ) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Puls.

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