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IRF6810STR1PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET ‚ RoHS pliant and Halogen Free  Typical values (unless otherwise specified) Low Profile (<0.7 mm) Dual Sided Cooling patible  VDSS VGS RDS(on) RDS(on) Ultra Low Package Inductance 25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for Control FET Application 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6810STRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 220 EAS , Single Pulse Avalanche Energy (mJ) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 ID TOP 1.6A 2.4A BOTTOM 13A 100 Typical VGS(th) Gate th.

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