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IRF6802SDPBF - Power MOSFET

Datasheet Summary

Description

The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • ) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Puls.

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IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V l Dual Sided Cooling Compatible  l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses G G D D l Compatible with existing Surface Mount Techniques  S S l 100% Rg tested l PD - 97769 DirectFET®plus Power MOSFET ‚ SA Applicable DirectFET Outline and Substrate Outline (see p.
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