Datasheet Details
| Part number | IRF6811SPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 276.92 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6811SPBF Datasheet
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General Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Key Features
- e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A ID, Drain Current (A) Fig 12. Maximum Drai.