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IRF6811SPBF - Power MOSFET

Datasheet Summary

Description

The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A ID, Drain Current (A) Fig 12. Maximum Drai.

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PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Footprint compatible to DirectFET Typical values (unless otherwise specified) DirectFET®plus Power MOSFET ‚ VGS RDS(on) Qgs2 1.4nC IRF6811SPbF IRF6811STRPbF RDS(on) Qoss 11nC VDSS Qg tot 25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V Qgd 4.2nC Qrr 23nC Vgs(th) 1.6V 11nC D G S D SQ Applicable DirectFET Outline and Substrate Outline (see p.
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