Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- e-to-Drain Voltage (V)
0.1
Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
Fig11. Maximum Safe Operating Area
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A
ID, Drain Current (A)
Fig 12. Maximum Drai.
IRF6811STRPBF Datasheet
