Description
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- )
1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
300
EAS , Single Puls.
IRF6802SDTRPBF Datasheet
