IRF6810STR1PBF Datasheet - International Rectifier

Power MOSFET

IRF6810STR1PBF Features

* Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fi

IRF6810STR1PBF General Description

The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in .

IRF6810STR1PBF Datasheet (293.45 KB)

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IRF6810STR1PBF

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International Rectifier

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Power mosfet.
PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET RoHS Compliant and Halogen Free Typical values (unless ot.

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IRF6810STR1PBF Power MOSFET International Rectifier

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IRF6810STR1PBF Features

IRF6810STR1PBF General Description

Datasheet Details

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