Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
Fig 11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
220
EAS , Single Pulse Avalanche Energy (mJ)
200 180 160 140 120 100 80 60 40 20 0 25 50 75
ID TOP 1.6A 2.4A BOTTOM 13A
100
Typical VGS(th) Gate th.
IRF6810STR1PBF Datasheet
