Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
Features
- °C Single Pulse 0.01 0.01 0.1 1
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
140 120
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 1.0mA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
1000
EAS , Single Pulse Avalanche Energy (mJ)
F.
IRF6892STR1PBF Datasheet
