IRF6892STRPBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6892STRPBF
Manufacturer	International Rectifier
File Size	249.71 KB
Description	Power MOSFET
Datasheet	IRF6892STRPBF Datasheet
Additional preview pages of the IRF6892STRPBF datasheet.

Product details

Description

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Features

°C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 1.0mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) F.

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Published: Apr 1, 2014 |