900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF6893MTRPbF Datasheet

MOSFET

No Preview Available !

PD - 97761
IRF6893MPbF
IRF6893MTRPbF
DirectFET®plus MOSFET with Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Low Package Inductance
l Optimized for High Frequency Switching 
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
25nC 8.5nC 2.5nC 36nC 29nC 1.6V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
l Footprint compatible to DirectFET
MX
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±16
29
23 A
168
230
370 mJ
23 A
5
ID = 29A
4
3
TJ = 125°C
2
1 TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
ID= 23A
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.4mH, RG = 50, IAS = 23A.
1
02/22/12


International Rectifier Electronic Components Datasheet

IRF6893MTRPbF Datasheet

MOSFET

No Preview Available !

IRF6893MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
VDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.1
–––
–––
–––
–––
gfs Forward Transconductance
110
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.02
1.2
1.6
1.6
-3.9
–––
–––
–––
–––
25
5.9
2.5
8.5
8.1
11
29
0.47
18
83
19
33
3480
1140
210
Typ.
–––
–––
–––
22
36
Max.
–––
–––
1.6
2.1
2.1
–––
250
100
-100
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 1.0mA
V/°C
m
ID = 10mA ( 25°C-125°C)
iVGS = 10V, ID = 29A
iVGS = 4.5V, ID = 23A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 10mA
μA VDS = 20V, VGS = 0V
nA VGS = 16V
VGS = -16V
S VDS =13V, ID = 23A
VDS = 13V
nC VGS = 4.5V
ID = 23A
nC VDS = 16V, VGS = 0V
i
VDD = 13V, VGS = 4.5V
ns ID = 23A
RG= 1.8
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Max.
126
230
0.75
33
54
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
iV TJ = 25°C, IS = 23A, VGS = 0V
ins TJ = 25°C, IF =23A
nC di/dt = 400A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2
www.irf.com


Part Number IRF6893MTRPbF
Description MOSFET
Maker International Rectifier
PDF Download

IRF6893MTRPbF Datasheet PDF






Similar Datasheet

1 IRF6893MTRPbF MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy