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IRF6893MTRPbF, IRF6893MPbF MOSFET

IRF6893MTRPbF Description

PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (.
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

IRF6893MTRPbF Features

* 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1600 1400 1200 1000 Typical VGS(th) Gate threshold Voltage (V) 2.3 2.2 2.1 2.0 1.9 ID = 10mA 1.8 1.7 1.6 1.5 1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Thresho

IRF6893MTRPbF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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This datasheet PDF includes multiple part numbers: IRF6893MTRPbF, IRF6893MPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6893MTRPbF, IRF6893MPbF
Manufacturer
International Rectifier
File Size
225.39 KB
Datasheet
IRF6893MPbF-InternationalRectifier.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6893MTRPbF, IRF6893MPbF.
Please refer to the document for exact specifications by model.

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