IRF6893MTRPbF Datasheet | International Rectifier

- 97761 IRF6893MPb F IRF6893MTRPb F Direct FET®plus MOSFET with Schottky Diode ‚ l Ro Hs pliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Low Package Inductance l Optimized for High Frequency Switching  VDSS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25n C 8.5n C 2.5n C 36n C 29n C 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  l 100% Rg tested l Footprint patible to Direct FET™ ISOMETRIC Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6893MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6893MPb F balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors....