IRF6893MTRPbF Description
The IRF6893MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques....
IRF6893MTRPbF Key Features
- RoHs pliant Containing No Lead and Bromide Typical values (unless otherwise specified)
- Integrated Monolithic Schottky Diode
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Low Package Inductance
- Optimized for High Frequency Switching VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V
- Ideal for CPU Core DC-DC Converters
- Optimized for Sync. FET socket of Sync. Buck Converter