IRF7103QPbF Datasheet | International Rectifier

Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS 50V HEXFET® Power MOSFET RDS(on) max (m W) 130@VGS = 10V 200@VGS = 4.5V 3.0A 1.5A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 4.5V c Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current e Power Dissipation VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage f Single Pulse Avalanche Energy c Avalanche Current h Repetitive Avalanche Energy g Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max. 3.0 2.5 25 2.4 16 ± 20 22 See Fig. 16c, 16d, 19, 20 12 -55 to + 175 Units W W/°C V m J A m J V/ns °C Thermal Resistance Parameter RθJL Junction-to-Drain Lead fg RθJA Junction-to-Ambient Typ. - - - - - - Max. 20...