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International Rectifier Electronic Components Datasheet

IRF7103QPbF Datasheet

Power MOSFET

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PD - 96101C
IRF7103QPbF
Benefits
l Advanced Process Technology
l Dual N-Channel MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
VDSS
50V
HEXFET® Power MOSFET
RDS(on) max (mW)
130@VGS = 10V
200@VGS = 4.5V
ID
3.0A
1.5A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
ePower Dissipation
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
fSingle Pulse Avalanche Energy
cAvalanche Current
hRepetitive Avalanche Energy
gPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
www.irf.com
1
08/02/10


International Rectifier Electronic Components Datasheet

IRF7103QPbF Datasheet

Power MOSFET

No Preview Available !

IRF7103QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
50 ––– –––
––– 0.057 –––
––– ––– 130
––– ––– 200
1.0 ––– 3.0
3.4 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 10 15
––– 1.2 –––
––– 2.8 –––
––– 5.1 –––
––– 1.7 –––
––– 15 –––
––– 2.3 –––
––– 255 –––
––– 69 –––
––– 29 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A ‚
VGS = 4.5V, ID = 1.5A ‚
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55°C
VGS = 20V
VGS = -20V
ID = 2.0A
VDS = 40V
VGS = 10V
VDD = 25V ‚
ID = 1.0A
RG = 6.0
RD = 25
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
35
45
Max.
3.0
12
1.2
53
67
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
„ Starting TJ = 25°C, L = 4.9mH
RG = 25, IAS = 3.0A. (See Figure 12).
… ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS,
TJ 175°C
† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2 www.irf.com


Part Number IRF7103QPbF
Description Power MOSFET
Maker International Rectifier
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