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International Rectifier Electronic Components Datasheet

IRF7304QPBF Datasheet

Power MOSFET

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PD - 96104A
IRF7304QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
S1
G1
S2
G2
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniquestoachieveextremelylow on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
HEXFET® Power MOSFET
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
VDSS = -20V
RDS(on) = 0.090
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient„
Typ.
–––
Max.
62.5
Units
°C/W
www.irf.com
1
08/02/10


International Rectifier Electronic Components Datasheet

IRF7304QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7304QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
-20 ––– ––– V
––– -0.012 ––– V/°C
––– ––– 0.090
––– ––– 0.140
-0.70 ––– ––– V
4.0 ––– ––– S
––– ––– -1.0 µA
––– ––– -25
––– ––– -100 nA
––– ––– 100
––– ––– 22
––– ––– 3.3 nC
––– ––– 9.0
––– 8.4 –––
––– 26 –––
––– 51 –––
ns
––– 33 –––
––– 4.0 –––
––– 6.0 –––
nH
––– 610 –––
––– 310 –––
––– 170 –––
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -2.2A ƒ
VGS = -2.7V, ID = -1.8A ƒ
VDS = VGS, ID = -250µA
VDS = -16V, ID = -2.2A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
VGS = 12V
ID = -2.2A
VDS = -16V
VGS = -4.5V, See Fig. 6 and 12 ƒ
VDD = -10V
ID = -2.2A
RG = 6.0
RD = 4.5Ω, See Fig. 10 ƒ
D
Between lead tip
and center of die contact G
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.5
––– ––– -17
––– ––– -1.0
––– 56 84
––– 71 110
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
ns TJ = 25°C, IF = -2.2A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD -2.2A, di/dt ≤− 50A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
www.irf.com
2


Part Number IRF7304QPBF
Description Power MOSFET
Maker International Rectifier
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