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International Rectifier Electronic Components Datasheet

IRF7306QPBF Datasheet

Power MOSFET

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END OF LIFE
PD - 96105B
IRF7306QPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS = -30V
RDS(on) = 0.10Ω
SO-8
Base part number Orderable part number
Package
Type
IRF7306QPbF
IRF7306QTRPbF
IRF7306QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 529
EOL 527
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient„
www.irf.com
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
Typ.
–––
Max.
62.5
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
07/02/14


International Rectifier Electronic Components Datasheet

IRF7306QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7306QPbF
END OF LIFE
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-30 ––– –––
––– -0.037 –––
––– ––– 0.10
––– ––– 0.16
-1.0 ––– –––
2.5 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– ––– 25
––– ––– 2.9
––– ––– 9.0
––– 11 –––
––– 17 –––
––– 25 –––
––– 18 –––
––– 4.0 –––
––– 6.0 –––
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -1.8A ƒ
VGS = -4.5V, ID = -1.5A ƒ
VDS = VGS, ID = -250µA
VDS = -24V, ID = -1.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID = -1.8A
VDS = -24V
VGS = -10V, See Fig. 6 and 12 ƒ
VDD = -15V
ID = -1.8A
RG = 6.0Ω
RD = 8.2Ω, See Fig. 10 ƒ
D
Between lead tip
and center of die contact G
S
––– 440 –––
––– 200 –––
––– 93 –––
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.5
––– ––– -14
––– ––– -1.0
––– 53 80
––– 66 99
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
ns TJ = 25°C, IF = -1.8A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS,
TJ 150°C
www.irf.com
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.
2


Part Number IRF7306QPBF
Description Power MOSFET
Maker International Rectifier
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IRF7306QPBF Datasheet PDF






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