Datasheet4U Logo Datasheet4U.com

IRF7306QPBF - Power MOSFET

Description

These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF730 PowerMOS transistor NXP
IRF730 N-Channel Power MOSFET STMicroelectronics
IRF730 N-Channel Power MOSFET Intersil Corporation
IRF730 N-Channel Power MOSFET Fairchild Semiconductor
IRF730 N-Channel MOSFET NTE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7306 HEXFET Power MOSFET
IRF7301 Power MOSFET
IRF7301PBF HEXFET Power MOSFET
IRF7303 Power MOSFET
IRF7303PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
END OF LIFE PD - 96105B IRF7306QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Published: |