These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF730S | Vishay | Power MOSFET |
| IRF730 | STMicroelectronics | N-Channel Power MOSFET |
| IRF730 | Intersil | N-Channel Power MOSFET |
| IRF730B | Fairchild Semiconductor | 400V N-Channel MOSFET |
| IRF730 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRF730FI | Inchange Semiconductor | N-Channel Mosfet Transistor |
| IRF730 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF730A | Inchange Semiconductor | N-Channel MOSFET |
| IRF730A | Nell Power Semiconductor | N-Channel Power MOSFET |
| IRF730PBF | Thinki Semiconductor | N-Channel Type Power MOSFET |
