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International Rectifier Electronic Components Datasheet

IRF7309QPBF Datasheet

Power MOSFET

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PD - 96135A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniquestoachieveextremelylow on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
IRF7309QPbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS
6 D2
30V
-30V
G2 4
5 D2 RDS(on) 0.0500.10
P-CHANNEL MOSFET
Top View
SO-8
www.irf.com
1
08/02/10


International Rectifier Electronic Components Datasheet

IRF7309QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7309QPbF
nA
2 www.irf.com


Part Number IRF7309QPBF
Description Power MOSFET
Maker International Rectifier
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IRF7309QPBF Datasheet PDF






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