IRF7309

HEXFET Power MOSFET

International Rectifier

IRF7309 Features

* ms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t / t 2. Peak T =JP xZ DM 1 2 + T t

IRF7309 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the de.

IRF7309 Datasheet (162.21 KB)

IRF7309 Datasheet Preview — Preview of IRF7309 PDF

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Part number:

IRF7309

Manufacturer:

International Rectifier

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162.21 KB

Description:

Hexfet power mosfet.
PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosf.

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IRF7309 HEXFET Power MOSFET International Rectifier

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IRF7309 Features

IRF7309 General Description

Datasheet Details

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