* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provid
IRF7309QPBF Datasheet (729.05 KB)
IRF7309QPBF
International Rectifier
729.05 KB
Power mosfet.
PD - 96135A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C .
📁 Related Datasheet
IRF7309 HEXFET Power MOSFET (International Rectifier)
IRF7309IPbF Power MOSFET (International Rectifier)
IRF7309TRPBF-1 Power MOSFET (International Rectifier)
IRF730 PowerMOS transistor (NXP)
IRF730 N-Channel Power MOSFET (STMicroelectronics)
IRF730 N-Channel Power MOSFET (Intersil Corporation)
IRF730 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF730 N-Channel MOSFET (NTE)
IRF730 Power MOSFET (Vishay)
IRF730 N-Channel Power MOSFET (nELL)
