Datasheet Details
| Part number | IRF7341PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 184.11 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7341PBF Download (PDF) |
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| Part number | IRF7341PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 184.11 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7341PBF Download (PDF) |
|
|
|
l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = 55V RDS(on) = 0.050Ω 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l.
| Part Number | Description |
|---|---|
| IRF7341 | HEXFET Power MOSFET |
| IRF7341GPBF | Power MOSFET |
| IRF7341Q | HEXFET Power MOSFET |
| IRF7341QPbF | Power MOSFET |
| IRF7342 | Power MOSFET |
| IRF7342D2 | MOSFET & Schottky Diode |
| IRF7342D2PBF | MOSFET & Schottky Diode |
| IRF7342PBF | Power MOSFET |
| IRF7342QPBF | Power MOSFET |
| IRF7342TRPBF-1 | Power MOSFET |