Datasheet4U Logo Datasheet4U.com

IRF7341Q - HEXFET Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF734 Power MOSFET Vishay
IRF7342 Power MOSFET Infineon
IRF7342PbF Power MOSFET Infineon
IRF7342TR Dual P-Channel MOSFET UMW
IRF7342TRPBF Dual P-Channel MOSFET VBsemi

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7341QPbF Power MOSFET
IRF7341 HEXFET Power MOSFET
IRF7341GPBF Power MOSFET
IRF7341PBF HEXFET Power MOSFET
IRF7342 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.42A Benefits • • • • • • Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 G1 S2 G2 1 Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.