IRF7341Q Datasheet | International Rectifier

- 94391B Typical Applications - Anti-lock Braking Systems (ABS) - Electronic Fuel Injection - Air bag HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A Benefits - - - - - - Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 G1 S2 G2 Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. D1 D1 D2 D2 Top...