Datasheet Details
| Part number | IRF7343 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 143.71 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF7343_InternationalRectifier.pdf |
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Overview: PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 D2.
| Part number | IRF7343 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 143.71 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF7343_InternationalRectifier.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Compare IRF7343 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| HUAXUANYANG | IRF7343TRPBF | Dual N+P-Channel Enhancement Mode MOSFET | HUAXUANYANG |
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IRF7343TRPBF | Dual-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| IRF7343PBF | HEXFET Power MOSFET |
| IRF7343QPbF | Power MOSFET |
| IRF7341 | HEXFET Power MOSFET |
| IRF7341GPBF | Power MOSFET |
| IRF7341PBF | HEXFET Power MOSFET |
| IRF7341Q | HEXFET Power MOSFET |
| IRF7341QPbF | Power MOSFET |
| IRF7342 | Power MOSFET |
| IRF7342D2 | MOSFET & Schottky Diode |
| IRF7342D2PBF | MOSFET & Schottky Diode |