Datasheet4U Logo Datasheet4U.com

IRF7343PBF - HEXFET Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7343TRPBF Dual N+P-Channel Enhancement Mode MOSFET HUAXUANYANG
IRF7343TRPBF Dual-Channel MOSFET VBsemi
IRF734 Power MOSFET Vishay
IRF7342 Power MOSFET Infineon
IRF7342PbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7343 HEXFET Power MOSFET
IRF7343QPbF Power MOSFET
IRF7341 HEXFET Power MOSFET
IRF7341GPBF Power MOSFET
IRF7341PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 6 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.