IRF7343QPbF
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2 S2 3
7 D1
VDSS 55V -55V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.105Ω
Top View
SO-8
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS...
