IRF7341GPBF Datasheet | International Rectifier

IRF7341GPb F - Advanced Process Technology - ÿDual N-Channel MOSFET - ÿUltra Low On-Resistance - ÿ175°C Operating Temperature - ÿ Repetitive Avalanche Allowed up to Tjmax - ÿLead-Free - ÿHalogen-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. VDSS 55V HEXFET®...