IRF7341GPBF Overview
Key Specifications
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating
- These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications
- This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel
