IRF7341QPbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax •.

Datasheet Details

Part number	IRF7341QPbF
Manufacturer	International Rectifier (now Infineon)
File Size	209.69 KB
Description	Power MOSFET
Datasheet	IRF7341QPbF-InternationalRectifier.pdf

General Description

These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

IRF7341QPbF Distributor & Price

Compare IRF7341QPbF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRF7341Q	HEXFET Power MOSFET
IRF7341	HEXFET Power MOSFET
IRF7341GPBF	Power MOSFET
IRF7341PBF	HEXFET Power MOSFET
IRF7342	Power MOSFET
IRF7342D2	MOSFET & Schottky Diode
IRF7342D2PBF	MOSFET & Schottky Diode
IRF7342PBF	Power MOSFET
IRF7342QPBF	Power MOSFET
IRF7342TRPBF-1	Power MOSFET