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PD -95199
IRF7341PbF
Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = 55V RDS(on) = 0.050Ω
6 5
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7341PBF Datasheet
