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IRF7341Q Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.