IRF7379QPbF Overview
Description
These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating
- These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications
