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International Rectifier Electronic Components Datasheet

IRF7379QPbF Datasheet

Power MOSFET

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-
8 package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
S2 1
G2 2
S1 3
G1 4
PD - 96111B
IRF7379QPbF
HEXFET® Power MOSFET
8 D2
N-Ch P-Ch
7 D2
6 D1
VDSS
30V
-30V
5 D1 RDS(on) 0.0450.090
SO-8
Absolute Maximum Ratings
VSD
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20
5.0 -5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient„
Max.
50
Units
°C/W
1
08/09/10


International Rectifier Electronic Components Datasheet

IRF7379QPbF Datasheet

Power MOSFET

No Preview Available !

IRF7379QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
30 — —
-30 — — V
— 0.032 —
— -0.037 — V/°C
— 0.038 0.045
— 0.055 0.075
— 0.070 0.090
— 0.130 0.180
1.0 — —
-1.0 — — V
5.2 — —
2.5 — — S
— — 1.0
— — -1.0
— — 25 µA
— — -25
–– — ±100
— — 25
— — 25
— — 2.9
— — 2.9 nC
— — 7.9
— — 9.0
— 6.8 —
— 11 —
— 21 —
— 17 —
— 22 — ns
— 25 —
— 7.7 —
— 18 —
— 4.0 —
— 6.0 — nH
— 520 —
— 440 —
— 180 —
— 200 — pF
— 72 —
— 93 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A ƒ
VGS = 4.5V, ID = 4.9A ƒ
VGS = -10V, ID =- 4.3A ƒ
VGS = -4.5V, ID =- 3.7A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A ƒ
VDS = -24V, ID = -1.8A
ƒ
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
ƒ
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0,
RD = 6.2
ƒ
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0,
RD = 8.2
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Min.
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
Typ. Max. Units
— 3.1
— -3.1
— 46
A
— -34
— 1.0
— -1.0
V
47
53
71
80
ns
56
66
84
99
nC
Conditions
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
N-Channel
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
ƒ
ƒ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
2
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com


Part Number IRF7379QPbF
Description Power MOSFET
Maker International Rectifier
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IRF7379QPbF Datasheet PDF






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