IRF7475PBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRF7475PBF
Manufacturer	International Rectifier (now Infineon)
File Size	192.94 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7475PBF Datasheet

Overview

PD - 95278 IRF7475PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.

Key Features

will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt t.

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