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IRF7700GPBF - Power MOSFET

Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

  • gundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information.05/2009 www. irf. com 9 www. DataSheet. in.

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PD - 96155A IRF7700GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -20V RDS(on) max 0.015@VGS = -4.5V 0.024@VGS = -2.5V ID -8.6A -7.3A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the de9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 B T signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area than the standard SO-8.
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