IRF7750GPBF Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides the designer ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9!