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International Rectifier Electronic Components Datasheet

IRF7750GPBF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
PD-96144A
IRF7750GPbF
HEXFET® Power MOSFET
VDSS = -20V
RDS(on) = 0.030
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Interna-
tional Rectifier is well known for, provides the designer
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
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TSSOP-8
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
05/14/09
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International Rectifier Electronic Components Datasheet

IRF7750GPBF Datasheet

Power MOSFET

No Preview Available !

IRF7750GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.030
––– ––– 0.055
VGS = -4.5V, ID = -4.7A ‚
VGS = -2.5V, ID = -3.8A ‚
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
11 ––– ––– S VDS = -10V, ID = -4.7A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = -12V
VGS = 12V
Qg Total Gate Charge
––– 26 39
ID = -4.7A
Qgs Gate-to-Source Charge
––– 3.9 5.8 nC VDS = -16V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 8.0 12
––– 15 –––
VGS = -5.0V‚
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 54 –––
––– 180 –––
ns
ID = -1.0A
RD = 10
tf Fall Time
––– 210 –––
RG = 24‚
Ciss Input Capacitance
––– 1700 –––
VGS = 0V
Coss
Output Capacitance
––– 380 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.0
––– -38
––– -1.2
26 39
16 24
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com
www.DataSheet.in


Part Number IRF7750GPBF
Description Power MOSFET
Maker International Rectifier
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