Datasheet Summary
- 96145A
IRF7751GPbF l l l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
-4.5A -3.8A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! signer with an extremely efficient and reliable device for use in battery and...