IRF7754
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 ––– –––
––– 0.008 –––
––– ––– 25
––– ––– 34
––– ––– 49
-0.4 ––– -0.9
16 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 22 –––
––– 3.9 –––
––– 4.8 –––
––– 9.8 14.7
––– 18 27
––– 267 401
––– 191 287
––– 1984 –––
––– 618 –––
––– 385 –––
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -5.4A
VGS = -2.5V, ID = -4.6A
VGS = -1.8V, ID = -3.9A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.4A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -5.4A
VDS = -6V
VGS = -4.5V
VDD = -6V, VGS = -4.5V
ID = -1.0A
RD = 6Ω
RG = 6Ω
VGS = 0V
VDS = -6V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
39
27
Max.
-1.0
-22
-1.2
59
41
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
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