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l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free
VDSS
-12V
PD-96017A
IRF7756PbF
HEXFET® Power MOSFET
RDS(on) max
0.040@VGS = -4.5V 0.058@VGS = -2.5V
0.087@VGS = -1.8V
ID
±4.3A ±3.4A
±2.2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF7756PbF Datasheet
