(Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.

HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Co.

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to a.

IRF7807D1PBF

IRF7807D2

IRF7807D2PbF

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807PbF

IRF7807PbF-1

IRF7807TRPbF-1

IRF7807V

IRF7807VD1