(Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25mΩ 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.

HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Co.

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to .

IRF7807D1

IRF7807D1PBF

IRF7807D2PbF

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807PbF

IRF7807PbF-1

IRF7807TRPbF-1

IRF7807V

IRF7807VD1