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IRF7807D2PbF - MOSFET / SCHOTTKY DIODE

Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Features

  • (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°C Average ForwardCurrent.
  • 70°C Junction & Storage Temperature Range Symbol V DS VGS ID IDM PD IF (AV) TJ, TSTG Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.7 2.3.
  • 55 to 150 Units V A W A °C.

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Full PDF Text Transcription

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PD- 95436A IRF7807D2PbF • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free FETKY™ MOSFET / SCHOTTKY DIODE SO-8 A/S 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G4 5 K/D D Top View Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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