IRF7807D2PbF diode equivalent, mosfet / schottky diode.
(Max Values)
VDS RDS(on) Qg QSW Qoss
IRF7807D2 30V
25mΩ 14nC 5.2nC 21.6nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Dr.
HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Co.
The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to .
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