Datasheet4U Logo Datasheet4U.com

IRF7807D1PBF - HEXFET Power MOSFET

General Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

Overview

PD- 95208 IRF7807D1PbF FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low.

Key Features

  • (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www. irf. com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
  • Static Drain-Source on Resistance.
  • Drain-Source Leakage Current.
  • Gate-Source Leakage Current.
  • Total Gate Charge Synch FET.
  • Total Gate Charge Control FET.
  • Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge.