This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IR.

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the .

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807D1

IRF7807D1PBF

IRF7807D2

IRF7807D2PbF

IRF7807PbF

IRF7807PbF-1

IRF7807TRPbF-1

IRF7807VD1