IRF8301MPbF Description
The IRF8301MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,...
IRF8301MPbF Key Features
- Ultra-low RDS(on)
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra-low Package Inductance
- Optimized for high speed switching or high current switch (Power Tool)
- Low Conduction and Switching Losses