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International Rectifier Electronic Components Datasheet

IRF8301MPbF Datasheet

Power MOSFET

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StrongIRFET
IRF8301MTRPbF
l Ultra-low RDS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3m@10V 1.9m@ 4.5V
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Ordering Information
Base Part Number
IRF8301MPbF
Package Type
DirectFET MT
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8301MTRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
6
5 ID = 32A
4
3
2 TJ = 125°C
1 TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Max.
±20
34
27
192
250
260
25
Units
A
mJ
A
5.0
4.0
ID= 25A VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50
QG, Total Gate Charge (nC)
60
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
1 www.irf.com © 2013 International Rectifier
September 6, 2013


International Rectifier Electronic Components Datasheet

IRF8301MPbF Datasheet

Power MOSFET

No Preview Available !

IRF8301MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
150
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS
Continuous Source Current
–––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
21
1.3
1.9
1.7
-6.0
–––
–––
–––
–––
–––
51
12
5.4
16
18
21
28
1.0
20
30
25
17
6140
1270
590
Typ.
–––
–––
0.77
27
45
Max. Units
Conditions
–––
–––
1.5
2.4
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
imVGS = 10V, ID = 32A
iVGS = 4.5V, ID = 25A
V VDS = VGS, ID = 150µA
mV/°C
1.0
150
100
-100
–––
77
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 25A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 25A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
3.0
Ãi––– VDD = 15V, VGS = 4.5V
––– ns ID = 25A
––– RG = 1.8
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max.
110
250
1.0
41
68
Units
Conditions
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
iV TJ = 25°C, IS = 25A, VGS = 0V
ins TJ = 25°C, IF = 25A
nC di/dt = 500A/µs
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.82mH, RG = 25, IAS = 25A.
‡ Pulse width 400µs; duty cycle 2%.
2 www.irf.com © 2013 International Rectifier
September 6, 2013


Part Number IRF8301MPbF
Description Power MOSFET
Maker International Rectifier
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IRF8301MPbF Datasheet PDF






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International Rectifier





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