Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.
Features
- 00
1
Tc = 25°C Tj = 150°C Single Pulse 0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
160 2.5
120 2.0
80
40
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 13. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.5 ID = 100µA ID = 150µA ID = 250µA
1.0 ID = 1.0mA ID = 1.0A
0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C )
Fig 14. Typical Threshold Voltage vs. Junction Temperature.
IRF8301MPbF Datasheet
