IRF8301MTRPBF Datasheet - International Rectifier

Power MOSFET

IRF8301MTRPBF Features

* 00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature

IRF8301MTRPBF General Description

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout .

IRF8301MTRPBF Datasheet (353.67 KB)

IRF8301MTRPBF Datasheet Preview — Preview of IRF8301MTRPBF PDF

Datasheet Details

Part number:

IRF8301MTRPBF

Manufacturer:

International Rectifier

File Size:

353.67 KB

Description:

Power mosfet.
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.

📁 Related Datasheet

IRF8301MPbF Power MOSFET (International Rectifier)

IRF830 PowerMOS transistor (NXP)

IRF830 N-Channel Power MOSFET (STMicroelectronics)

IRF830 N-CHANNEL ENHANCEMENT MODE MOSFET (TRSYS)

IRF830 N-Channel Power MOSFET (Intersil Corporation)

IRF830 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF830 Power MOSFET (International Rectifier)

IRF830 N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)

IRF830 Power MOSFET (Vishay)

IRF830 Power Field Effect Transistor (ON Semiconductor)

TAGS

IRF8301MTRPBF Power MOSFET International Rectifier

Image Gallery

IRF8301MTRPBF Features

IRF8301MTRPBF General Description

Datasheet Details

File Size:

Description:

IRF8301MTRPBF Distributor