The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile.
Features
00
1
Tc = 25°C Tj = 150°C Single Pulse 0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
160 2.5
120 2.0
80
40
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 13. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.5 ID = 100µA ID = 150µA ID = 250µA
1.0 ID = 1.0mA ID = 1.0A
0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C )
Fig 14. Typical Threshold Voltage vs. Junction Temperature.
StrongIRFET IRF8301MTRPbF
l Ultra-low RDS(on) l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible l Ultra-low Package Inductance
l Optimized for high speed switching or high current switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V
MT
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.
IRF8301MTRPBF Datasheet
