IRF8301MTRPBF Datasheet | International Rectifier

Description The IRF8301MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. Ordering Information Base Part Number IRF8301MPb F Package Type Direct FET MT Standard Pack Form Quantity Tape and Reel Orderable Part Number IRF8301MTRPb F Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS Gate-to-Source Voltage e Continuous Drain Current, VGS @ 10V e Continuous Drain Current, VGS @ 10V f Continuous Drain Current, VGS @ 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current 6 5 ID = 32A 3 2 TJ = 125°C 1 TJ = 25°C 0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Max. ±20 34 27 192 250 260 25 Units A m J A ID= 25A VDS= 24V VDS= 15V 0.0 0 10 20 30 40 50 QG, Total Gate Charge (n C) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage 1 .irf. © 2013 International Rectifier September 6,...