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IRF8302MPBF Key Features

  • RoHs pliant and Halogen-Free 
  • Integrated Monolithic Schottky Diode
  • Low Profile (<0.7 mm)
  • Dual Sided Cooling patible 
  • Ultra Low Package Inductance
  • Optimized for High Frequency Switching  HEXFET® Power MOSFET plus Schottky Diode ‚ Typical values (unless o
  • Optimized for Sync. FET socket of Sync. Buck Converter
  • Low Conduction and Switching Losses

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IRF8302MPBF Description

The IRF8302MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...